Winbond DDR W631GG6KB-12

  存储IC    |      2017.07.31    |     人气:294    |    标签:W631G WINBOND
  1. GENERAL DESCRIPTION


    The W631GG6KB is a 1G bits DDR3 SDRAM, organized as 8,388,608 words ? 8 banks ? 16 bits. This device achieves high speed transfer rates up to 1866 Mb/sec/pin (DDR3-1866) for various applications. The W631GG6KB is sorted into the following speed grades: -11, 11I, -12, 12I, -15 and 15I. The -11 and 11I speed grade are compliant to the DDR3-1866 (13-13-13) specification (the 11I industrial grade which is guaranteed to support -40°C ≤ TCASE ≤ 95°C). The -12 and 12I speed grades are compliant to the DDR3-1600 (11-11-11) specification (the 12I industrial grade which is guaranteed to support -40°C ≤ TCASE ≤ 95°C). The -15 and 15I speed grades are compliant to the DDR3-1333 (9-9-9) specification (the 15I industrial grade which is guaranteed to support -40°C ≤ TCASE ≤ 95°C).
    The W631GG6KB is designed to comply with the following key DDR3 SDRAM features such as posted CAS#, programmable CAS# Write Latency (CWL), ZQ calibration, on die termination and asynchronous reset. All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and CK# falling). All I/Os are synchronized with a differential DQS-DQS# pair in a source synchronous fashion.


    2. FEATURES


    ? Power Supply: VDD, VDDQ = 1.5V ± 0.075V
    ? Double Data Rate architecture: two data transfers per clock cycle
    ? Eight internal banks for concurrent operation
    ? 8 bit prefetch architecture
    ? CAS Latency: 6, 7, 8, 9, 10, 11 and 13
    ? Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable On-The-Fly (OTF)
    ? Programmable read burst ordering: interleaved or nibble sequential
    ? Bi-directional, differential data strobes (DQS and DQS#) are transmitted / received with data
    ? Edge-aligned with read data and center-aligned with write data
    ? DLL aligns DQ and DQS transitions with clock
    ? Differential clock inputs (CK and CK#)
    ? Commands entered on each positive CK edge, data and data mask are referenced to both edges of a differential data strobe pair (double data rate)
    ? Posted CAS with programmable additive latency (AL = 0, CL - 1 and CL - 2) for improved command, address and data bus efficiency
    ? Read Latency = Additive Latency plus CAS Latency (RL = AL + CL)
    ? Auto-precharge operation for read and write bursts
    ? Refresh, Self-Refresh, Auto Self-refresh (ASR) and Partial array self refresh (PASR)
    ? Precharged Power Down and Active Power Down
    ? Data masks (DM) for write data
    ? Programmable CAS Write Latency (CWL) per operating frequency
    ? Write Latency WL = AL + CWL
    ? Multi purpose register (MPR) for readout a predefined system timing calibration bit sequence?

         System level timing calibration support via write leveling and MPR read pattern
    ? ZQ Calibration for output driver and ODT using external reference resistor to ground
    ? Asynchronous RESET# pin for Power-up initialization sequence and reset function
    ? Programmable on-die termination (ODT) for data, data mask and differential strobe pairs
    ? Dynamic ODT mode for improved signal integrity and preselectable termination impedances during writes
    ? 2K Byte page size
    ? Interface: SSTL_15
    ? Packaged in WBGA 96 Ball (9x13 mm2), using lead free materials with RoHS compliant